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| 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application www..com High speed power switching Features * * * * High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ117 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. Value at TC = 25C www..com Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings -400 20 -2 -4 -2 40 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS -400 -- -- -2.0 -- Typ -- -- -- -- 5 Max -- 1 -1 -5.0 7 Unit V A mA V Test conditions I D = -10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = -320 V, VGS = 0 I D = -1 mA, VDS = -10 V I D = -1 A, VGS = -15 V*1 S pF pF pF ns ns ns ns V ns I F = -1 A, VGS = 0 I F = -1 A, VGS = 0, diF/dt = 100 A/s I D = -2 A, VGS = -15 V, RL = 15 I D = -1 A, VDS = -20 V*1 VDS = -10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr VGS(off) RDS(on) 0.4 -- -- -- -- -- -- -- -- -- 0.7 520 110 15 10 25 45 35 -0.8 300 -- -- -- -- -- -- -- -- -- -- 2 2SJ117 60 Power vs. Temperature Derating Maximum Safe Operation Area -10 Channel Dissipation Pch (W) ID (peak) Drain Current ID (A) 40 -3 -1.0 -0.3 -0.1 -0.03 0 www..com 50 100 Case Temperature TC (C) 150 -1 -10 -30 -100 -300 -1,000 -3 Drain to Source Voltage VDS (V) ID (max) D C O PW pe = 10 Ta = 25C 10 s 10 m s( 1 0 s ot ra tio Sh 20 n (T ) C = 25 C ) Typical Output Characteristics -2.0 Typical Transfer Characteristics -5 VDS = -20 V Pulse Test 0V -1 -15 V -6 V Drain Current ID (A) -5 V -4 -1.6 TC = -25C 25C Drain Current ID (A) TC = 25C -1.2 -3 -4.5 V -0.8 75C -2 -4 V -0.4 -1 VGS = -3 V 0 -8 -20 -4 -12 -16 Drain to Source Voltage VDS (V) 0 -2 -6 -8 -4 -10 Gate to Source Voltage VGS (V) 3 2SJ117 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Forward Transfer Admittance yfs (S) -20 5 VDS = -20 V Pulse Test Ta = -25C Forward Transfer Admittance vs. Drain Current -16 2 1.0 0.5 -12 -2 A -8 -1 A ID = -0.5 A Pulse Test -8 -20 -4 -12 -16 Gate to Source Voltage VGS (V) 75C 25C 0.2 0.1 0.05 -0.2 -4 0 www..com -0.5 -1.0 -2 -5 -10 Drain Current ID (A) -20 Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature 10 VGS = 15 V ID = -1 A 8 Capacitance C (pF) 1,000 300 100 1,0000 3,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 6 4 Coss 30 10 3 Crss 2 0 -40 1 40 0 80 120 Case Temperature TC (C) 160 0 -40 -80 -120 -160 -200 Drain to Source Voltage VDS (V) 4 2SJ117 Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (S) Switching Characteristics 1.0 0.5 TC = 25C VDS = -10 V ID = -0.5 A 1,000 300 Switching Time t (ns) 100 30 10 3 1 -0.2 td (off) tf tr td (on) 0.2 0.1 0.05 0.02 0.01 100 k www..com 1M 10 M Frequency f (Hz) 100 M -0.5 -1.0 -2 -5 -10 Drain Current ID (A) -20 Maximum Body to Drain Diode Forward Voltage -5 Drain to Source Voltage VDS (V) Reverse Drain Current IDR (A) 0 Dynamic Input Characteristics 0 ID = -3 A -100 VDD = -300 V -4 -200 -100 VDD = -300 V -8 -200 -100 VDS VGS -400 -16 -12 Gate to Source Voltage VGS (V) -4 -3 -200 -2 -5 V -10 V -15 V -0.4 -0.8 VGS = 0 V VGS = 10 V -300 -1 -500 0 -1.2 -1.6 -2.0 0 4 8 12 16 Source to Drain Voltage VSD (V) Gate Charge Qg (nc) -20 20 5 2SJ117 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL 50 Vin -15 V Vout td (on) 90% 10% tr td (off) 90% 90% 10% tf Vin 10% Waveforms VDD . = -30 V . www..com 6 2SJ117 Package Dimensions As of January, 2001 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 18.5 0.5 15.0 0.3 1.27 www..com +0.2 -0.1 2.7 MAX 14.0 0.5 1.5 MAX 7.8 0.5 0.76 0.1 2.54 0.5 2.54 0.5 0.5 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) TO-220AB Conforms Conforms 1.8 g 7 2SJ117 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. www..com 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8 |
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